PHOTOINJECTION STUDIES OF ION-IMPLANTATION-INDUCED ELECTRON TRAPS IN MOS STRUCTURESMARCZEWSKI M; STRZALKOWSKI I.1982; APPL. PHYS., A SOLIDS SURF.; ISSN 0721-7250; DEU; DA. 1982; VOL. 29; NO 4; PP. 233-236; BIBL. 10 REF.Article

A STUDY OF DIELECTRIC LOSSES IN SOME PURE PRIMARY ALIPHATIC ALCOHOLS AND THEIR SOLUTIONS IN NONPOLAR SOLVENTS.FURMANSKI W; STRZALKOWSKI I; SKULSKI L et al.1975; BULL. ACAD. POLON. SCI., SCI. CHIM.; POLOGNE; DA. 1975; VOL. 23; NO 10; PP. 875-882; ABS. RUSSE; BIBL. 20 REF.Article

DIELECTRIC CONSTANT AND ITS TEMPERATURE DEPENDENCE FOR GAAS, CDTE, AND ZNSE.STRZALKOWSKI I; JOSHI S; CROWELL CR et al.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 28; NO 6; PP. 350-352; BIBL. 19 REF.Article

Positive and negative charge creation in the SiO₂ film of a MOS transistor by high electric field stressSTRZALKOWSKI, I; KOWALSKI, M.Applied physics. A, Materials science & processing (Print). 1996, Vol 63, Num 2, pp 179-182, issn 0947-8396Article

Low field DC investigation of hot carrier trapping in silicon dioxide filmsSTRZALKOWSKI, I; MARCZEWSKI, M; KOWALSKI, M et al.Applied physics. A, Solids and surfaces. 1990, Vol 51, Num 1, pp 19-22, issn 0721-7250Article

Thermal depopulation studies of electron traps in ion implanted silica layersSTRZALKOWSKI, I; MARCZEWSKI, M; KOWALSKI, M et al.Applied physics. A, Solids and surfaces. 1986, Vol 40, Num 2, pp 123-127, issn 0721-7250Article

Thermal energy depth of electron traps in the SiO₂ layer of the ion-implanted MOS structureMARCZEWSKI, M; STRZALKOWSKI, I; KOWALSKI, M et al.Solid state communications. 1984, Vol 49, Num 10, pp 977-979, issn 0038-1098Article

π-bonded model of an oxygen-vacancy center in SiO₂BARANOWSKI, J. M; STRZALKOWSKI, I; MARCZEWSKI, M et al.Journal of applied physics. 1987, Vol 61, Num 8, pp 2904-2909, issn 0021-8979, 1Article